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1 Pertemuan 2 Karakteristik Kelistrikan Gerbang MOSFET Matakuliah: H0362/Very Large Scale Integrated Circuits Tahun: 2005 Versi: versi/01.

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Presentasi berjudul: "1 Pertemuan 2 Karakteristik Kelistrikan Gerbang MOSFET Matakuliah: H0362/Very Large Scale Integrated Circuits Tahun: 2005 Versi: versi/01."— Transcript presentasi:

1 1 Pertemuan 2 Karakteristik Kelistrikan Gerbang MOSFET Matakuliah: H0362/Very Large Scale Integrated Circuits Tahun: 2005 Versi: versi/01

2 2 Learning Outcomes Pada Akhir pertemuan ini, diharapkan mahasiswa akan dapat menunjukkan karakteristik kelistrikan gerbang MOSFET.

3 3 MOS Fisik + V G Gate voltage Gate Gate oxide Silicon surface p-type substrate t ox + V G > 0 Q S surface charge p-type Silicon surface Bentuk fisik

4 4 nFET Gate Gate oxide Drain Source L p-substrate n+ Tampak samping n+ SourceDrain Gate Tampak atas 3 dimensi Bentuk fisik

5 5 nFET L p-substrate n+ S G D + - V GSn I Dn V DSn S D G I Dn + - V GSn - + V DSn Simbol Struktur Arus dan tegangan

6 6 Pengaturan kanal p-substrate n+ S G D + - V GSn < V Tn I Dn = 0 V DSn Cut off p-substrate n+ S G D + - V GSn > V Tn I Dn mengalir V DSn Active n+ Source n+ Drain V GSn  V Tn Q e = 0 CUT off n+ Source n+ Drain V GSn > V Tn QeQe kanal Active nFET

7 7 I-V characteristics I Dn + - V GSn V DSn = V DD + - I Dn V GSn V Tn Cutoff Active 0 I Dn + - V GSn > V Tn V DSn + - I Dn V DSn V sat non saturation 0 I-V fungsi V GSn I-V fungsi V DSn

8 x V DS (V) I D (A) VGS= 2.5 V VGS= 2.0 V VGS= 1.5 V VGS= 1.0 V ResistiveSaturation V DS = V GS - V T I-V characteristics V DSn I Dn nFET

9 9 RC model n+ Gate C SB C GS C DB C GD G C GS C GD C SB C DB S D RnRn S CSCS CDCD D G Physical visualization Symbol diagram Linier model nFET

10 10 pFET Gate p-substrate n+ nFET Gate p+ p-substrate n-well pFET n  p p  n D S I Dp + - G - + V SDp Struktur Simbol p-substrate S G D + - V SDp I Dp V SGp - n-well p+ + V DD n-well

11 11 I-V characteristics p-substrate S G S + - V SGp  |V Tn | I Dp = 0 V SDp - n-well p+ + V DD n-well Cutoff p-substrate S G S + - V SGp > |V Tn | I Dp V SDp - n-well + V DD n-well p+ Active I Dn + - V SFp V SDp = V DD + - I Dp V SGp V Tn Cutoff Active 0 pFET

12 12 V DD ON OFF V out = V DD + - V in = V DD OFF ON V out = V in = V DD + - Low input voltage High input voltage V OH = V DD V out VMVM V OH = 0 V DD VMVM V IL V IH V out = V in Mn ON, Mp OFF MP ON, Mn OFF 0 1 x x x DC Inverter

13 13 Switching characteristics V DD RpRp RnRn V out + - V in + - C Dp C Dn V DD Mp Mn V out + - V in + - Inverter circuit RC switch model V DD V in V out t1t1 t2t2 tftf trtr t t DC Inverter

14 14 I DD V DD P = V DD I DD P = P DC + P dyn P DC : daya arus searah P dyn : daya akibat aktifitas switching Rangkaian CMOS Power Dissipasi

15 15 RESUME Bentuk fisik dan karakteristik nFET dan pFET. Karakteristik DC inverter. Karakteristik switch inverter. Power dissipasi


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